Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace|Anneal Bond furnace (C3)]] | [[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace|Anneal Bond furnace (C3)]] | ||
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[[Al-Anneal furnace (C4)]] | |||
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[[Oxidation 8" (E1)]] | |||
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[[Specific Process Knowledge/Thermal Process/Resist Pyrolysis furnace|Resist Pyrolysis furnace (research tool)]] | [[Specific Process Knowledge/Thermal Process/Resist Pyrolysis furnace|Resist Pyrolysis furnace (research tool)]] | ||
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|Dry and wet oxidation of 100 mm and 150 mm wafers. Oxidation of new wafers without RCA cleaning. Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4. | |Dry and wet oxidation of 100 mm and 150 mm wafers. Oxidation of new wafers without RCA cleaning. Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4. | ||
|Dry and wet oxidation and annealing of wafers from Wafer Bonder 02 and from PECVD4 and PECVD3. | |Dry and wet oxidation and annealing of wafers from Wafer Bonder 02 and from PECVD4 and PECVD3. | ||
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|Dry oxidation of silicon and annealing in N<sub>2</sub>. But the furnace is mainly being used for pyrolysis of different resists | |Dry oxidation of silicon and annealing in N<sub>2</sub>. But the furnace is mainly being used for pyrolysis of different resists | ||
|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation). | |Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation). | ||
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*Dry: O<sub>2</sub> | *Dry: O<sub>2</sub> | ||
*Wet: Bubbler | *Wet: Bubbler | ||
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*Dry: O<sub>2</sub> | *Dry: O<sub>2</sub> | ||
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*N<sub>2</sub> | *N<sub>2</sub> | ||
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*N<sub>2</sub> | *N<sub>2</sub> | ||
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*900 <sup>o</sup>C - 1150 <sup>o</sup>C | *900 <sup>o</sup>C - 1150 <sup>o</sup>C | ||
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*25 <sup>o</sup>C - 1050 <sup>o</sup>C | *25 <sup>o</sup>C - 1050 <sup>o</sup>C | ||
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*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||
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*1-30 50 mm, 100 mm or 150 mm wafers per run | *1-30 50 mm, 100 mm or 150 mm wafers per run | ||
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*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4. | *All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4. | ||
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*All processed wafers have to be RCA cleaned, except for wafers from Wafer Bonder 02 and from PECVD4 and PECVD3. | *All processed wafers have to be RCA cleaned, except for wafers from Wafer Bonder 02 and from PECVD4 and PECVD3 | ||
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*Only samples for resist pyrolysis, and all sample materials have to be approved by DTU Nanolab. Samples with metals and III-V materials are NOT allowed | *Only samples for resist pyrolysis, and all sample materials have to be approved by DTU Nanolab. Samples with metals and III-V materials are NOT allowed | ||