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Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,366 edits
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|Dry and wet oxidation of 100 mm and 150 mm wafers. Oxidation of new wafers without RCA cleaning. Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4.  
|Dry and wet oxidation of 100 mm and 150 mm wafers. Oxidation of new wafers without RCA cleaning. Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4.  
|Dry and wet oxidation and annealing of wafers from Wafer Bonder 02 and from PECVD4 and PECVD3.
|Dry and wet oxidation and annealing of wafers from Wafer Bonder 02 and from PECVD4 and PECVD3.
|Pyrolysis of different resists, annealing in N<sub>2</sub>, dry oxidation of silicon  
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*Pyrolysis of different resists
*Annealing in N<sub>2</sub>
*Dry oxidation of silicon  
|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
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