Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

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![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan33-2|Sinano3.3]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan33-2|Sinano3.3]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan37|Sinano3.7]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan37|Sinano3.7]]
![[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinan331|Sinano3.31]]
|-
|-
!Cl<sub>2</sub> (sccm)
!Cl<sub>2</sub> (sccm)
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|0
|0
|0
|0
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|-
|-
!BCl<sub>3</sub> (sccm)
!BCl<sub>3</sub> (sccm)
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|5
|5
|5
|5
|
|-
|-
!HBr (sccm)
!HBr (sccm)
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|15
|15
|15
|15
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|-
|-
! Coil power (W)
! Coil power (W)
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|900 (Forward)
|900 (Forward)
|900 (Load)
|900 (Load)
|
|-
|-
!Platen power (W)
!Platen power (W)
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|75
|75
|60
|60
|
|-
|-
! Pressure (mtorr)
! Pressure (mtorr)
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|2
|2
|10
|10
|
|-
|-
!Temperature (<sup>o</sup>C)
!Temperature (<sup>o</sup>C)
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| 20
| 20
| 50
| 50
|
|-
|-
! Process time (s)
! Process time (s)
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|300
|300
|180
|180
|
|-
|-
! Nominal line width
! Nominal line width
! colspan="10" align="center"| Etched depths (nm)
! colspan="11" align="center"| Etched depths (nm)
|-
|-
! 30 nm
! 30 nm
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|170
|170
|295
|295
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|185
|185
|411
|411
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|253
|253
|566
|566
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|278
|278
|600
|600
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|-
|-
!150 nm
!150 nm
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|280
|280
|647
|647
|
|
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|-
|-
! Nominal line width
! Nominal line width
! colspan="10" align="center"| Etch rates in trenches (nm/min)
! colspan="11" align="center"| Etch rates in trenches (nm/min)
|-
|-
!30 nm
!30 nm
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|57
|57
|59
|59
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|62
|62
|82
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|84
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|113
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|93
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|120
|120
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|93
|93
|129
|129
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! colspan="10" align="center"| zep mask parameters
! colspan="12" align="center"| zep mask parameters
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! start (end)
! start (end)
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| [[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/180nmzep|180 (64)]]
| [[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/180nmzep|180 (64)]]
| [[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/340nmzep|348 (53)]]
| [[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/340nmzep|348 (53)]]
|
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! zep etch rate (nm/min)
! zep etch rate (nm/min)
|18
| 18
|27
| 27
|35
| 35
|39
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|54
| 54
|45
| 45
|38
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|39
| 39
|59
| 59
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|-
|-

Revision as of 12:45, 4 April 2011

Etching of nanostructures in silicon using the ICP Metal Etcher or DRIE Pegasus


Recipe Sinano3.0 Sinano3.1 Sinano3.2 Sinano3.3 Sinano3.4 Sinano4.0 Sinano3.5 Sinano3.6 Sinano3.3 Sinano3.7 Sinano3.31
Cl2 (sccm) 0 0 0 0 0 20 15 15 0 0
BCl3 (sccm) 5 3 5 5 5 0 5 5 5 5
HBr (sccm) 15 17 15 15 15 0 0 0 15 15
Coil power (W) 900 (Load) 900 (Forward) 900 (Forward) 900 (Forward) 900 (Forward) 900 (Load) 900 (Load) 900 (Forward) 900 (Forward) 900 (Load)
Platen power (W) 50 50 60 75 90 60 60 60 75 60
Pressure (mtorr) 2 2 2 2 2 2 5 10 2 10
Temperature (oC) 20 20 20 20 20 20 20 20 20 50
Process time (s) 150 180 120 180 120 90 120 180 300 180
Nominal line width Etched depths (nm)
30 nm 198 231 147 214 163 227 185 170 295
60 nm 256 308 181 305 229 253 191 185 411
90 nm 259 335 195 342 255 251 222 253 566
120 nm 277 346 203 357 262 257 221 278 600
150 nm 269 341 205 369 265 262 225 280 647
Nominal line width Etch rates in trenches (nm/min)
30 nm 79 77 74 71 82 151 93 57 59
60 nm 102 103 91 102 115 169 96 62 82
90 nm 104 112 98 114 128 167 111 84 113
120 nm 111 115 102 119 131 171 111 93 120
150 nm 108 114 103 123 133 175 113 93 129
zep mask parameters
start (end) 110 (64) 178 (96) 180 (110) 180 (64) 180 (72) 110 (43) 110 (34) 180 (64) 348 (53)
zep etch rate (nm/min) 18 27 35 39 54 45 38 39 59


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