Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
| Line 420: | Line 420: | ||
*Pressure:Fully open APC valve (3.9 mTorr) | *Pressure:Fully open APC valve (3.9 mTorr) | ||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | *Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | ||
|Tried high coil power and low platen power. This seemed to give som undercutting,especially on the narrow lines. The smallest has been etched away. | |Tried high coil power and low platen power. This seemed to give som undercutting,especially on the narrow lines. The smallest has been etched away. The etch rate was very low | ||
| | | | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:2500W" perrow="7" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:2500W" perrow="7" widths="200px" heights="150px"> | ||
| Line 435: | Line 435: | ||
*Platen temperature [<sup>o</sup>C]: 20 | *Platen temperature [<sup>o</sup>C]: 20 | ||
*H2 flow [sccm]:0 | *H2 flow [sccm]:0 | ||
*O2 flow [sccm]: 0 | *'''O2 flow [sccm]: 0''' | ||
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0 | *C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0 | ||
*He flow [sccm]:225 | *He flow [sccm]:225 | ||
*Pressure:Fully open APC valve (3.9 mTorr) | *Pressure:Fully open APC valve (3.9 mTorr) | ||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | *Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | ||
|Increasing the platen power and and removing the oxygen helped on the under cutting but the lines are still very narrow at the bottom. It also increased the etch rate | |||
| | | | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:225sccm O2:0sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:225sccm O2:0sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px"> | ||
File:C10393_04.jpg | File:C10393_04.jpg | ||