Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN | *PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN | ||
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| | |Repeating with longer etch time to etch 1500 nm down. Unfortunately this damaged the hardware due to the EM coils getting too hot. | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier '''14 min etch''' (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier '''14 min etch''' (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px"> | ||
File:C10160_02.jpg | File:C10160_02.jpg | ||