Jump to content

Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

Bghe (talk | contribs)
Bghe (talk | contribs)
Line 167: Line 167:
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
|Not a large effect from adding a little O2
|
|
|text
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow="6" widths="200px" heights="150px">
File:C10026_03__05.jpg
File:C10026_03__05.jpg