Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' | *Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' | ||
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN | *PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN | ||
|Less sidewall passivation from removing the H2 | |||
| | | | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow="6" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow="6" widths="200px" heights="150px"> | ||
File:C10025_03__11.jpg | File:C10025_03__11.jpg | ||