Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN | *PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN | ||
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| | |More sidewall passivation on chip than on full wafer | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="6" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="6" widths="200px" heights="150px"> | ||