Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
| Line 178: | Line 178: | ||
*Platen temperature [<sup>o</sup>C]: 20 | *Platen temperature [<sup>o</sup>C]: 20 | ||
*H2 flow [sccm]:0 | *H2 flow [sccm]:0 | ||
*O2 flow [sccm]: 0 | *'''O2 flow [sccm]: 0''' | ||
*'''C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0''' | *'''C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0''' | ||
*'''He flow [sccm]:225''' | *'''He flow [sccm]:225''' | ||