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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
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</gallery>
</gallery>
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*Coil Power [W]:600
*Platen Power [W]: 50
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*O2 flow [sccm]: 10
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 6.5
*He flow [sccm]:100
*Pressure:Fully open APC valve (<2 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
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<gallery caption=" C10751: SiO2 etch with Cr mask on wafer piece on Si carrier 20 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 50W, coil power:600W" perrow="7" widths="200px" heights="150px">
<gallery caption=" C10751: SiO2 etch with Cr mask on wafer piece on Si carrier 20 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 50W, coil power:600W" perrow="7" widths="200px" heights="150px">
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</gallery>
</gallery>
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*Coil Power [W]:300
*Platen Power [W]: 25
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*O2 flow [sccm]: 10
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 6.5
*He flow [sccm]:100
*Pressure:Fully open APC valve (<2 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
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<gallery caption=" C10752: SiO2 etch with Cr mask on wafer piece on Si carrier 30 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
<gallery caption=" C10752: SiO2 etch with Cr mask on wafer piece on Si carrier 30 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
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</gallery>
</gallery>
|-
|-
|Text
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*Coil Power [W]:300
*Platen Power [W]: 25
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*O2 flow [sccm]: 10
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 6.5
*He flow [sccm]:100
*Pressure:Fully open APC valve (<2 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
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<gallery caption=" C10834: SiO2 etch with Cr mask on wafer piece on Si carrier 45 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
<gallery caption=" C10834: SiO2 etch with Cr mask on wafer piece on Si carrier 45 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
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</gallery>
</gallery>
|-
|-
|Text
|
*Coil Power [W]:300
*Platen Power [W]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*O2 flow [sccm]: 10
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 6.5
*He flow [sccm]:100
*Pressure:Fully open APC valve (<2 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
|
|
<gallery caption=" C10844: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 20W, coil power:300W" perrow="6" widths="200px" heights="150px">
<gallery caption=" C10844: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 20W, coil power:300W" perrow="6" widths="200px" heights="150px">
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