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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
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</gallery>
</gallery>
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*Coil Power [W]:1800
*Platen Power [W]: 150
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*O2 flow [sccm]: 20
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*He flow [sccm]:205
*Pressure:Fully open APC valve (3.6 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
Line 308: Line 318:
</gallery>
</gallery>
|-
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|Text
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*Coil Power [W]:1200
*Platen Power [W]: 100
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*O2 flow [sccm]: 20
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*He flow [sccm]:205
*Pressure:Fully open APC valve (3.6 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
Line 320: Line 340:
</gallery>
</gallery>
|-
|-
|Text
|
*Coil Power [W]:1800
*Platen Power [W]: 150
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*O2 flow [sccm]: 20
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*He flow [sccm]:205
*Pressure:Fully open APC valve (3.6 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 10 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 10 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
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