Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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</gallery> | </gallery> | ||
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*Coil Power [W]:2500 | |||
*Platen Power [W]: 200 | |||
*Platen temperature [<sup>o</sup>C]: 20 | |||
*H2 flow [sccm]:0 | |||
*O2 flow [sccm]: 0 | |||
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0 | |||
*He flow [sccm]:225 | |||
*Pressure:Fully open APC valve (3.35 mTorr) | |||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' | |||
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN | |||
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr" perrow="6" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr" perrow="6" widths="200px" heights="150px"> | ||
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</gallery> | </gallery> | ||
|- | |- | ||
| | | | ||
*Coil Power [W]:1200 | |||
*Platen Power [W]: 150 | |||
*Platen temperature [<sup>o</sup>C]: 20 | |||
*H2 flow [sccm]:0 | |||
*O2 flow [sccm]: 0 | |||
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0 | |||
*He flow [sccm]:225 | |||
*Pressure:Fully open APC valve (3.35 mTorr) | |||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' | |||
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN | |||
| | | | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px"> | ||