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Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions

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*[[/Deposition of low stress nitride using the 6" LPCVD nitride furnace|Deposition of low stress nitride using the 6" LPCVD nitride furnace ]]
*[[/Deposition of low stress nitride using the 6" LPCVD nitride furnace|Deposition of low stress nitride using the 6" LPCVD nitride furnace ]]
*[[/Deposition of stoichiometric nitride using the 6" LPCVD nitride furnace|Deposition of stoichiometric nitride using the 6" LPCVD nitride furnace <span style="color:Red">(Only available for 6" wafers and special permission required)</span>]]
*[[/Deposition of stoichiometric nitride using the 6" LPCVD nitride furnace|Deposition of stoichiometric nitride using the 6" LPCVD nitride furnace <span style="color:Red">(4" wafers need a special permission)</span>]]


*[[/Using LPCVD silicon nitride as a masking material for KOH etching|Using LPCVD silicon nitride as a masking material for KOH etching]]
*[[/Using LPCVD silicon nitride as a masking material for KOH etching|Using LPCVD silicon nitride as a masking material for KOH etching]]


==Equipment performance and process related parameters==
==Equipment performance and process related parameters==
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