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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
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</gallery>
</gallery>
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*Coil Power [W]:2500
*Platen Power [W]: 200
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 25.6
*He flow [sccm]:448.7
*Pressure:Fully open APC valve (8-9 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow="6" widths="200px" heights="150px">
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</gallery>
</gallery>
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|Text
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*Coil Power [W]:2500
*Platen Power [W]: 200
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*O2 flow [sccm]: 5
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 25.6
*He flow [sccm]:448.7
*Pressure:Fully open APC valve (8-9 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow="6" widths="200px" heights="150px">
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