Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
| Line 96: | Line 96: | ||
*He flow [sccm]:448.7 | *He flow [sccm]:448.7 | ||
*Pressure:Fully open APC valve (8-9 mTorr) | *Pressure:Fully open APC valve (8-9 mTorr) | ||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' | *Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' | ||
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN | |||
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<gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | ||
| Line 116: | Line 117: | ||
*He flow [sccm]:448.7 | *He flow [sccm]:448.7 | ||
*Pressure:Fully open APC valve (8-9 mTorr) | *Pressure:Fully open APC valve (8-9 mTorr) | ||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' | *Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' | ||
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN | |||
| | | | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="6" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="6" widths="200px" heights="150px"> | ||