Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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!SEM gallery | !SEM gallery | ||
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*Coil Power [W]:2500 | |||
*Platen Power [W]: 200 | |||
*Platen temperature [<sup>o</sup>C]: 20 | |||
*H2 flow [sccm]:25.6 | |||
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 25.6 | |||
*He flow [sccm]:448.7 | |||
*Pressure:Fully open APC valve (8-9 mTorr) | |||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' (PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN) | |||
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<gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | ||
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</gallery> | </gallery> | ||
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*Coil Power [W]:2500 | |||
*Platen Power [W]: 200 | |||
*Platen temperature [<sup>o</sup>C]: 20 | |||
*H2 flow [sccm]:25.6 | |||
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 25.6 | |||
*He flow [sccm]:448.7 | |||
*Pressure:Fully open APC valve (8-9 mTorr) | |||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A' (PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN) | |||
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="6" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="6" widths="200px" heights="150px"> |
Revision as of 17:24, 5 February 2024
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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
SiO2 trench etching with Cr mask
Start parameters, variations noted in the gallery headline | Recipe name: no 10 with lower platen power |
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Coil Power [W] | 2500 |
Platen Power [W] | 200 |
Platen temperature [oC] | 20 |
H2 flow [sccm] | 25.6 |
C4F8 flow [sccm] | 25.6 |
He flow [sccm] | 448.7 |
Pressure | Fully open APC valve (8-9 mTorr) |
Electromagnetic coils (EM) 'outer coil' / 'inner coil' | '2 A' / '30 A' (PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN) |
- 100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc.
![](/images/thumb/7/76/C041696Cr_01.jpg/400px-C041696Cr_01.jpg)
Results
Temporary conclusions on how the process parameters affect the results in this study: | What process parameters affect the results? |
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Profile SEM images
Recipe settings | SEM gallery |
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Profile, top view at tilted SEM images on 800 nm pitch and 50% duty cycle ( look at the Cr mask in top of the page
- SiO2 etch with Cr mask on full wafer 6 min etch
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
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pitch 800 nm
Top 461 nm
@edge 437 nm
bottom 402 nm
height 916 nm
height from edge 827 nm
Cr left 83.5 nm
selectivity 55.5
- SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W
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pitch 800 nm
Top 444 nm
bottom 374 nm
height 718 nm
Cr left 85 nm
selectivity 48
- SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W
- SiO2 etch with Cr mask on wafer piece on Si carrier 10 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W
- SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W, the mask is removed by plasma ashing on top view and tilted view
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tilt 30 degrees
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tilt 30 degrees
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tilt 20 degrees
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tilt 20 degrees