Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions
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===SiO2 etch with Cr mask 100 nm and with 500 nm for the resist for the Cr etch=== | ===SiO2 etch with Cr mask 100 nm and with 500 nm for the resist for the Cr etch=== | ||
Barc etch and Cr etch were done in ICP metal using end point detection. The sample was a full 6" wafer | Barc etch and Cr etch were done in ICP metal using end point detection. The sample was a full 6" wafer | ||
<gallery caption="SiO2_res_10 2x5:00 min with 3 min TDESC clean in between 100 nm Cr mask | <gallery caption="SiO2_res_10 2x5:00 min with 3 min TDESC clean in between 100 nm Cr mask, with 500 nm resist" widths="200px" heights="200px" perrow="6"> | ||
File:C041630_center_07.jpg | File:C041630_center_07.jpg | ||
File:C041630_center_08.jpg | File:C041630_center_08.jpg | ||
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<gallery caption="SiO2_res_10 5:00 min 100 nm Cr mask | <gallery caption="SiO2_res_10 5:00 min 100 nm Cr mask, with 500 nm resist, resist/Cr stripped after etch in plasma asher 35min" widths="250px" heights="250px" perrow="4"> | ||
File:S0411376_profile_20.jpg| 200nm/400nm | File:S0411376_profile_20.jpg| 200nm/400nm | ||
File:S0411376_profile_13.jpg|250nm/500nm | File:S0411376_profile_13.jpg|250nm/500nm | ||
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</gallery> | </gallery> | ||
===Testing with electromagnetic coils /Cr mask=== | ===Testing with electromagnetic coils /Cr mask=== | ||