Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions
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{{CC-bghe2}} <br> | {{CC-bghe2}} <br> | ||
I | I was starting up development of SiO2 etch using aSi as masking material. This is on pause because the results did not look promishing on high aspect ratio structures wit DUV pattern due to large faceting on the aSi mask. I turned to Cr mask instead <br> | ||
The samples I use are: | The samples I use are: | ||
*6" Si afters with oxide (2µm), | *6" Si afters with oxide (2µm), | ||
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</gallery> | </gallery> | ||
==Testing with electromagnetic coils /Cr mask== | ==Testing with electromagnetic coils /Cr mask== | ||