Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

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 </gallery>
-<gallery caption=" C10752: SiO2 etch with Cr mask on wafer piece on Si carrier 30 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="7" widths="200px" heights="150px">
+<gallery caption=" C10752: SiO2 etch with Cr mask on wafer piece on Si carrier 30 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
 File:C10752_09.jpg
 File:C10752_07.jpg
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 File:C10752_01.jpg
 File:C10752_10.jpg
-File:C10834T_21.jpg
-File:C10834T_19.jpg
 File:C10834T_17.jpg
+File:C10834T_15.jpg
 File:C10834T_20.jpg
-File:C10834T_15.jpg
+File:C10834T_19.jpg
+File:C10834T_21.jpg
 File:C10834T_22.jpg
 </gallery>