Specific Process Knowledge/Lithography/EBeamLithography/AR-P 617: Difference between revisions
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=Contrast curve= | =Contrast curve= | ||
A contrast curve for AR-P 617.06 is provided below based on exposure at 100 kV for doses from 2.5 to 200 µC/cm<sup>2</sup>. The dose clear is dependent on softbake temperature, in this case | A contrast curve for AR-P 617.06 is provided below based on exposure at 100 kV for doses from 2.5 to 200 µC/cm<sup>2</sup>. The dose clear is dependent on softbake temperature, in this case 200C and 180C is used. Process parameters are: | ||
*Date: January 30th 2024 | *Date: January 30th 2024 | ||
Revision as of 16:15, 30 January 2024
AR-P 617 is a positive PMMA based E-beam resist from Allresist. Process information provided by Allresist can be found here.
Spin coating
AR-P 617 can be spin coated on LabSpin 2 and 3 using the CSAR/PMMA bowlset. A spin curve for AR-P 617.06 is provided below. Process parameters are:
- Date: January 22nd 2024
- Coater: LabSpin 3
- Substrate: 2" Si
- Acceleration: 1000 RPM/s
- Time: 60 s
- Baking temperature: 200C (setpoint at 222C)
- Baking time: 120 s
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AR-P 617.06 spin curve. |
Resulting resist thickness can be determined as y = axb+c, where y is thickness [nm], x is spin speed [RPM], a = 65274, b = -0.748 and c = 163.1.
Contrast curve
A contrast curve for AR-P 617.06 is provided below based on exposure at 100 kV for doses from 2.5 to 200 µC/cm2. The dose clear is dependent on softbake temperature, in this case 200C and 180C is used. Process parameters are:
- Date: January 30th 2024
- Coater: LabSpin 2
- Substrate: 2" Si
- Acceleration: 1000 RPM/s
- Time: 60 s
- Baking temperature: 200C and 180C
- Baking time: 120 s
- Exposure: 100 kV (JEOL 9500)
- Development: AR 600-50 for 60 seconds
- Stopper: IPA for 30 seconds + blow dry with nitrogen
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AR-P 617.06 contrast curve. |