Specific Process Knowledge/Lithography/EBeamLithography/AR-P 617: Difference between revisions
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A contrast curve for AR-P 617.06 is provided below based on exposure at 100 kV for doses from 2.5 to 200 µC/cm<sup>2</sup>. The dose clear is dependent on softbake temperature, in this case either 200C or 180C is used. Process parameters are: | A contrast curve for AR-P 617.06 is provided below based on exposure at 100 kV for doses from 2.5 to 200 µC/cm<sup>2</sup>. The dose clear is dependent on softbake temperature, in this case either 200C or 180C is used. Process parameters are: | ||
Date: January 30th 2024 | *Date: January 30th 2024 | ||
Coater: LabSpin 2 | *Coater: LabSpin 2 | ||
Substrate: 2" Si | *Substrate: 2" Si | ||
Acceleration: 1000 RPM/s | *Acceleration: 1000 RPM/s | ||
Time: 60 s | *Time: 60 s | ||
Baking temperature: 200C and 180C | *Baking temperature: 200C and 180C | ||
Baking time: 120 s | *Baking time: 120 s | ||
Exposure: 100 kV (JEOL 9500) | *Exposure: 100 kV (JEOL 9500) | ||
Development: AR 600-50 for 60 seconds | *Development: AR 600-50 for 60 seconds | ||
Stopper: IPA for 30 seconds + blow dry with nitrogen | *Stopper: IPA for 30 seconds + blow dry with nitrogen | ||
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