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Specific Process Knowledge/Lithography/EBeamLithography/AR-P 617: Difference between revisions

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=Contrast curve=
=Contrast curve=
A contrast curve for AR-P 617.06 is provided below based on exposure at 100 kV for doses from 2.5 to 200 µC/cm<sup>2</sup>. The dose clear is dependent on softbake temperature, in this case either 200C or 180C is used. Process parameters are:
Date: January 30th 2024
Coater: LabSpin 2
Substrate: 2" Si
Acceleration: 1000 RPM/s
Time: 60 s
Baking temperature: 200C and 180C
Baking time: 120 s
Exposure: 100 kV (JEOL 9500)
Development: AR 600-50 for 60 seconds
Stopper: IPA for 30 seconds + blow dry with nitrogen
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AR-P 617.06 contrast curve.
AR-P 617.06 contrast curve.
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=Development=
=Development=
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/EBeamLithography/AR-P_617"