Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano12: Difference between revisions
New page: == The nano1.2 recipe == {| border="2" cellpadding="2" cellspacing="1" |+ '''Recipe nano1.2''' |- ! rowspan="6" align="center"| Recipe | Gas | C<sub>4</sub>F<sub>8</sub> 38 sccm, SF<sub>... |
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C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -10 degs, 120 secs | C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -10 degs, 120 secs | ||
</gallery> | </gallery> | ||
== Comments == | |||
Lower temperature certainly looks like a step in the right direction. Confirms that the process was too etch aggressive previously, hence the isotropic profiles. | |||