Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3/SiO2 etch: Difference between revisions
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| Y40 || 8.33 sccm|| 50 sccm|| 100 sccm|| 100 W || 10 mTorr || ±15.1% || 35.8 n/min (lowest)|| 70.8@15s, 107.5@5min || ± 17.6%@15s, ± 11.1%@4min | | Y40 || 8.33 sccm|| 50 sccm|| 100 sccm|| 100 W || 10 mTorr || ±15.1% || 35.8 n/min (lowest)|| 70.8@15s, 107.5@5min || ± 17.6%@15s, ± 11.1%@4min | ||
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<gallery> | <gallery> | ||