Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3/SiO2 etch: Difference between revisions
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| Y37 ||25 sccm|| 75 sccm|| 0 sccm|| 100 W || 40 mTorr || ±24.6% || 24.4 nm/min (lowest) || || | | Y37 ||25 sccm|| 75 sccm|| 0 sccm|| 100 W || 40 mTorr || ±24.6% || 24.4 nm/min (lowest) || || | ||
|- | |- | ||
| Y38 || 25 sccm|| 75 sccm|| 0 sccm|| 100 W || 60 mTorr || ± 8.1% || 34.0 nm/min (highest in center and at edge) || 141.4@15s, 137.5@2min || ± 13.9%@15s, 16.5%@2min | | Y38 || 25 sccm|| 75 sccm|| 0 sccm|| 100 W || 60 mTorr || ± 8.1% || 34.0 nm/min (highest in center and at edge) || 141.4@15s, 137.5@2min || ± 13.9%@15s, ± 16.5%@2min | ||
|- | |- | ||
| Y39 || 50 sccm|| 150 sccm|| 0 sccm|| 100 W || 10 mTorr || ±25.0% || 34.8 nm/min (lowest) | | Y39 || 50 sccm|| 150 sccm|| 0 sccm|| 100 W || 10 mTorr || ±25.0% || 34.8 nm/min (lowest)|| || | ||
|- | |- | ||
| Y40 || 8.33 sccm|| 50 sccm|| 100 sccm|| 100 W || 10 mTorr || ±15.1% || 35.8 n/min (lowest) | | Y40 || 8.33 sccm|| 50 sccm|| 100 sccm|| 100 W || 10 mTorr || ±15.1% || 35.8 n/min (lowest)|| 70.8@15s, 107.5@5min || ± 17.6%@15s, ± 11.1%@4min | ||
|} | |} | ||
[[File:Peg3 SiO2 uniformity Y34 to Y40.jpg|400px]] | [[File:Peg3 SiO2 uniformity Y34 to Y40.jpg|400px]] | ||
[[File:Peg3 SiO2 uniformity normalized Y34 to Y40.jpg|400px]] | [[File:Peg3 SiO2 uniformity normalized Y34 to Y40.jpg|400px]] | ||