Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano10: Difference between revisions

@@ Line 44: / Line 44: @@
 C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, 10 degs, 120 secs
 </gallery>
+== Comments ==
+The process looks to be too etch aggressive, not enough passivation.  I would consider any or all of the following:
+* Decreasing the wafer temperature (make more passivant)
+* Increasing C4F8 flow (make more passivant)
+* Increasing platen power (make more directional)
+* Decreasing coil power (make less etch-aggressive and more directional.
+Also, if the tool has Short Funnel and 5mm spacers fitted, it may be too close to  the plasma  -  previous good nano-scale etch result was achieved with Long Funnel and 100mm spacers.
+The conditions are similar to the nano-etch conditions for acceptance process C:
+{| border="2" cellpadding="2" cellspacing="1"
+|-
+|
+| Etch
+|-
+| Gas Flow (sccm)
+| SF<sub>6</sub>  38 + C<sub>4</sub>F<sub>8</sub> 70
+|-
+| Pressure (mT)
+| 4
+|-
+| APC angle (%)
+| 33.2
+|-
+| Coil power (W)
+| 450
+|-
+| Matching (Forward/ Load)
+| L/ 33 & T/ 43
+|-
+| HF Platen power (W)
+| 100
+|-
+| Matching (Forward/ Load)
+| L/ 49 & T/ 53
+|-
+| Time
+| 01:30
+|-
+|}