Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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==Deposition of Silicon Oxide using ALD== | ==Deposition of Silicon Oxide using ALD== | ||
Thin films of silicon oxide up to 50 nm can | Thin films of silicon oxide up to 50 nm can be deposited in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]. The ALD2 uses the plasma source and can therefore only deposit on one wafer at a time. The deposition takes place at 300 <sup>o</sup>C, where the growth rate is 0.1222nm on flat samples. It is also possible to deposit uniform layers on high aspect ratio structures with a growth rate of 0.1629 nm/cycle. | ||
*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2|Deposition of Silicon Oxide using ALD2]] | *[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2|Deposition of Silicon Oxide using ALD2]] | ||