Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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''All contents by DTU Nanolab staff.'' | ''All contents by DTU Nanolab staff.'' | ||
Deposition of Silicon Oxide can be done with either LPCVD, PECVD, by | Deposition of Silicon Oxide can be done with either LPCVD, PECVD, by sputtering, by e-beam evaporation, or by ALD. You can also make a silicon oxide layer by growing a [[Specific Process Knowledge/Thermal Process/Oxidation|thermal oxide]] in a hot furnace but that requires a silicon surface as a starting point. | ||
==Deposition of Silicon Oxide using LPCVD== | ==Deposition of Silicon Oxide using LPCVD== | ||
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*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2|Deposition of Silicon Oxide using ALD2]] | *[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2|Deposition of Silicon Oxide using ALD2]] | ||
==Deposition of Silicon Oxide using e-beam evaporation== | |||
It is possible to e-beam evaporate silicon dioxide at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]. You can use silicon dioxide pellets as a starting point or silicon with an oxygen flow - in the latter case we expect the resultant films to be oxygen poor. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer. | |||
==Wet SiO2 growth == | ==Wet SiO2 growth == | ||
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![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ||
![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]] | ![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]] | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | |||
!Wet SiO2 growth in hot HNO3 | !Wet SiO2 growth in hot HNO3 | ||
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|Sputter deposition: can be done on top of a large range of materials | |Sputter deposition: can be done on top of a large range of materials | ||
|Sputter deposition: can be done on top of a large range of materials. | |Sputter deposition: can be done on top of a large range of materials. | ||
| E-beam evaporation: line-of-sight deposition on top of a large range of materials. | |||
|Wet SiO2 growth using hot HNO3. Done in fume hood 1 or 2 in D-3. '''Training and risk assessment always needed''' | |Wet SiO2 growth using hot HNO3. Done in fume hood 1 or 2 in D-3. '''Training and risk assessment always needed''' | ||
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*Slightly O-poor as deposited non-reactively (O:Si=64:36), may be tunable if reactively sputtered with O<sub>2</sub> (see acceptance test results [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|here]]) | *Slightly O-poor as deposited non-reactively (O:Si=64:36), may be tunable if reactively sputtered with O<sub>2</sub> (see acceptance test results [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|here]]) | ||
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* to be verified; may depend on O<sub>2</sub> flow | |||
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*SiO2 | *SiO2 | ||
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* Thin layers (up to 200-300 nm) | * Thin layers (up to 200-300 nm) | ||
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* Thin layers (up to 100 nm)* | |||
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*1,5-2 nm after 10 min. | *1,5-2 nm after 10 min. | ||
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*300 °C | *300 °C | ||
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*Room temp | *Room temp | ||
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*Room temp to 600 °C | *Room temp to 600 °C | ||
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*Room temp to 250 °C | |||
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*80°C | *80°C | ||
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*Medium. Perhaps use of HIPIMS can improve step coverage (requires significant process development) | *Medium. Perhaps use of HIPIMS can improve step coverage (requires significant process development) | ||
*Deposition on one side of the substrate | |||
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*No step coverage expected unless using tilt holder, in which case step coverage can be very good and can be tuned with the tilt angle. | |||
*Deposition on one side of the substrate | *Deposition on one side of the substrate | ||
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'''*''' If you wish to deposit more than 100 nm, please talk to responsible staff or write to thinfilm@nanolab.dtu.dk | |||