Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions
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! Nominal line width | ! Nominal line width | ||
! colspan=" | ! colspan="4" align="center"| Etched depths (nm) | ||
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! 30 nm | ! 30 nm | ||
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! colspan=" | ! colspan="4" align="center"| Etch rates in zep resist (nm/min) | ||
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! One point on wafer | ! One point on wafer | ||
Revision as of 10:36, 28 March 2011
| Recipe | nano1.0 | nano1.1 | nano1.2 | nano1.3 |
|---|---|---|---|---|
| Tool | Pegasus | Pegasus | Pegasus | Pegasus |
| C4F8 (sccm) | 52 | 52 | 52 | 52 |
| SF6 (sccm) | 38 | 38 | 38 | 38 |
| O2 (sccm) | 0 | 0 | 0 | 0 |
| Coil power (W) | 800 (forward) | 600 (forward) | 800 (forward) | 600 (forward) |
| Platen power (W) | 50 | 50 | 50 | 40 |
| Pressure (mtorr) | 4 | 4 | 4 | 4 |
| Temperature (degs C) | 10 | 10 | -10 | -10 |
| Process time (s) | 120 | 120 | 120 | 120 |
| Nominal line width | Etched depths (nm) | |||
| 30 nm | ||||
| 60 nm | ||||
| 90 nm | ||||
| 120 nm | ||||
| 150 nm | ||||
| Nominal line width | Etch rates in trenches (nm/min) | |||
| 30 nm | ||||
| 60 nm | ||||
| 90 nm | ||||
| 120 nm | ||||
| 150 nm | ||||
| Etch rates in zep resist (nm/min) | ||||
| One point on wafer | ||||
| Images | Images | Images | Images | Images |
The nanoetch