Jump to content

Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

← Older editNewer edit →
VisualWikitext
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
No edit summary
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
No edit summary
Line 61: Line 61:
|-
|-
! Nominal line width
! Nominal line width
! colspan="3" align="center"| Etched depths (nm)
! colspan="4" align="center"| Etched depths (nm)
|-
|-
! 30 nm
! 30 nm
Line 127: Line 127:
|-
|-
|
|
! colspan="5" align="center"| Etch rates in zep resist (nm/min)
! colspan="4" align="center"| Etch rates in zep resist (nm/min)
|-
|-
! One point on wafer
! One point on wafer
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch"