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Specific Process Knowledge/Thin film deposition/Deposition of Gold: Difference between revisions

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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
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|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion source
|Ar ion etch (only in E-beam evaporator Temescal)
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|
|RF Ar clean
|RF Ar clean
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|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|0.5-10 Å/s
|0.5-10 Å/s (in 10-pocket machine only up to 5 Å/s as material is deposited from a liner)
|1-10 Å/s
|1-10 Å/s
|Depends on process parameters, 1-10 Å/s  
|Depends on process parameters, 1-10 Å/s  
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*Silicon
 
*Silicon oxide
*See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
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* Silicon oxide  
* Silicon oxide