Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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==Oxidation== | ==Oxidation== | ||
At DTU Nanolab we have seven furnaces for thermal oxidation of silicon samples: Boron Drive-in + Pre-dep furnace (A1), Gate Oxide furnace (A2), Phosphorous Drive-in furnace (A3), Anneal-oxide furnace (C1), Anneal-Bond furnace (C3), Al-Anneal furnace (C3) and Multipurpose Annealing furnace. | At DTU Nanolab we have seven furnaces and one RTP (rapid thermal processor) for thermal oxidation of silicon samples: Boron Drive-in + Pre-dep furnace (A1), Gate Oxide furnace (A2), Phosphorous Drive-in furnace (A3), Anneal-oxide furnace (C1), Anneal-Bond furnace (C3), Al-Anneal furnace (C3) and Multipurpose Annealing furnace. | ||
Thermal oxidation can take place either by a dry process or by a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is slow for dry oxidation. | Thermal oxidation can take place either by a dry process or by a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is slow for dry oxidation. | ||