Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C | *Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C | ||
*No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C | *No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C | ||
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*700 <sup>o</sup>C - 1200 <sup>o</sup>C | |||
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*1-50 200 mm wafers | *1-50 200 mm wafers | ||
*Small samples on a carrier wafer, horizontal | *Small samples on a carrier wafer, horizontal | ||
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*Single-wafer process | |||
*Chips on carrier | |||
*100 mm or 150 mm wafers | |||
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**Metal: Almost all materials, permission is needed | **Metal: Almost all materials, permission is needed | ||
**Resist pyrolysis | **Resist pyrolysis | ||
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*Silicon | |||
*Silicon Nitride | |||
*Aluminum Oxide | |||
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