Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] | [[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] | ||
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[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing| Multipurpose Anneal Furnace]] | |||
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[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2| RTP2 Jipelec]] | [[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2| RTP2 Jipelec]] | ||
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[[Specific_Process_Knowledge/Thermal_Process/RTP Annealsys| RTP Annealsys (research tool)]] | [[Specific_Process_Knowledge/Thermal_Process/RTP Annealsys| RTP Annealsys (research tool)]] | ||
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|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | |Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | ||
|Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. | |Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. | ||
|Annealing, oxidation and resist pyrolysis of different samples. | |||
|Rapid thermal processing, usually, annealing (RTA). | |Rapid thermal processing, usually, annealing (RTA). | ||
|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation). | |Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation). | ||
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*N<sub>2</sub> | *N<sub>2</sub> | ||
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*N<sub>2</sub> | *N<sub>2</sub> | ||
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*H<sub>2</sub>-N<sub>2</sub> gas mixture | *H<sub>2</sub>-N<sub>2</sub> gas mixture | ||
*Vacuum is possible | *Vacuum is possible | ||
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*Ar | |||
*N<sub>2</sub> | |||
*Low vacuum is possible (min. 2/3 mbar) | |||
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*Ar | *Ar | ||
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*Up to 500 <sup>o</sup>C | *Up to 500 <sup>o</sup>C | ||
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*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨ | |||
*No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C | |||
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*20 <sup>o</sup>C - 1200 <sup>o</sup>C | *20 <sup>o</sup>C - 1200 <sup>o</sup>C | ||
* '''Max. 100 <sup>o</sup>C/s''' with '''carrier wafer''' or '''sample wafer''' | * '''Max. 100 <sup>o</sup>C/s''' with '''carrier wafer''' or '''sample wafer''' | ||
* '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor''' | * '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor''' | ||
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*700 <sup>o</sup>C - 1200 <sup>o</sup>C | *700 <sup>o</sup>C - 1200 <sup>o</sup>C | ||
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*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||
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*1-30 50 mm, 100 mm or 150 mm wafers | |||
*1-50 200 mm wafers | |||
*Small samples on a carrier wafer, horizontal | |||
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*Single-wafer process | *Single-wafer process | ||
*Chips on carrier | *Chips on carrier | ||
*50 mm, 100 mm or 150 mm wafers | *50 mm, 100 mm or 150 mm wafers | ||
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*Single-wafer process | *Single-wafer process | ||
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*Wafers with Al | *Wafers with Al | ||
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*Depends on the furnace quartz ware: | |||
**Clean: Samples that have been RCA cleaned | |||
**Metal: Almost all materials, permission is needed | |||
**Resist (for pyrolysis) | |||
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*Silicon | *Silicon | ||
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*Metals - ask for permisson | *Metals - ask for permisson | ||
*III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases. | *III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases. | ||
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*Silicon | *Silicon | ||