Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

Revision as of 10:01, 28 March 2011 view source Jml (talk \| contribs) Bureaucrats, danchip, Administrators 1,918 edits →Etching of nanostructures in silicon using the ICP Metal Etcher or DRIE Pegasus ← Older edit		Revision as of 10:02, 28 March 2011 view source Jml (talk \| contribs) Bureaucrats, danchip, Administrators 1,918 edits No edit summary Newer edit →
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	*[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch\|Nanoetch on DRIE-Pegasus)]]		*[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch\|Nanoetch on DRIE-Pegasus]]
	*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano1\|1 - the first nanoetch]]		*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Sinano1\|1 - the first nanoetch]]