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Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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Indiogo (talk | contribs)
NLAB-Employees-701, NLAB-LabmanagerAllUsers
462 edits
Indiogo (talk | contribs)
NLAB-Employees-701, NLAB-LabmanagerAllUsers
462 edits
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*20 <sup>o</sup>C - 1200 <sup>o</sup>C
*20 <sup>o</sup>C - 1200 <sup>o</sup>C
*Ramp up to 300 C/min
* '''Max. 100 <sup>o</sup>C/s''' with '''carrier wafer''' or '''sample wafer'''
* '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor'''
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*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
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