Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions
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! Process time (s) | ! Process time (s) | ||
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Revision as of 09:58, 28 March 2011
| Recipe | nano1.0 | nano1.1 | nano1.2 | nano1.3 | |||||
|---|---|---|---|---|---|---|---|---|---|
| Tool | Pegasus | Pegasus | Pegasus | Pegasus | |||||
| C4F8 (sccm) | 52 | 52 | 52 | 52 | |||||
| SF6 (sccm) | 38 | 38 | 38 | 38 | |||||
| O2 (sccm) | 0 | 0 | 0 | 0 | |||||
| Coil power (W) | 800 (forward) | 600 (forward) | 800 (forward) | 600 (forward) | |||||
| Platen power (W) | 50 | 50 | 50 | 40 | |||||
| Pressure (mtorr) | 4 | 4 | 4 | 4 | |||||
| Temperature (degs C) | 10 | 10 | -10 | -10 | Process time (s) | 120 | 120 | 120 | 120 |
| Nominal line width | Etched depths (nm) | ||||||||
| 30 nm | |||||||||
| 60 nm | |||||||||
| 90 nm | |||||||||
| 120 nm | |||||||||
| 150 nm | |||||||||
| Nominal line width | Etch rates in trenches (nm/min) | ||||||||
| 30 nm | |||||||||
| 60 nm | |||||||||
| 90 nm | |||||||||
| 120 nm | |||||||||
| 150 nm | |||||||||
| Etch rates in zep resist (nm/min) | |||||||||
| One point on wafer | |||||||||
| Images | Images | Images | Images | Images | |||||
The nanoetch