Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

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!Recipe
!Recipe
!nano1.0
!nano1.0
!nano1.1
!nano1.2
!nano1.3
|-
|-
!Tool
!Tool
|Pegasus
|Pegasus
|Pegasus
|Pegasus
|Pegasus
|-
|-
!C<sub>4</sub>F<sub>8</sub> (sccm)
!C<sub>4</sub>F<sub>8</sub> (sccm)
|52
|52
|52
|52
|52
|-
|-
!SF<sub>6</sub> (sccm)
!SF<sub>6</sub> (sccm)
|38
|38
|38
|38
|38
|-
|-
!O<sub>2</sub> (sccm)
!O<sub>2</sub> (sccm)
|0
|0
|0
|0
|0
|-
|-
! Coil power (W)
! Coil power (W)
|800 (forward)
|800 (forward)
|600 (forward)
|800 (forward)
|600 (forward)
|-
|-
!Platen power (W)
!Platen power (W)
|50
|50
|50
|50
|40
|-
|-
! Pressure (mtorr)
! Pressure (mtorr)
|4
|4
|4
|4
|4
|-
|-
! Process time (s)
! Process time (s)
|120
|120
|120
|120
|120
|-
|-
Line 32: Line 58:
|-
|-
! 30 nm
! 30 nm
|
|
|
|
|
|-
|-
!60 nm
!60 nm
|
|
|
|
|
|-
|-
!90 nm
!90 nm
|
|
|
|
|
|-
|-
!120 nm
!120 nm
|
|
|
|
|
|-
|-
!150 nm
!150 nm
|
|
|
|
|
|-
|-
! Nominal line width
! Nominal line width
! colspan="3" align="center"| Etch rates in trenches (nm/min)
! colspan="4" align="center"| Etch rates in trenches (nm/min)
|-
|-
!30 nm
!30 nm
|
|
|
|
|
|-
|-
!60 nm
!60 nm
|
|
|
|
|
|-
|-
!90 nm
!90 nm
|
|
|
|
|
|-
|-
!120 nm
!120 nm
|
|
|
|
|
|-
|-
!150 nm
!150 nm
|
|
|
|
|
|-
|-
|
|
! colspan="3" align="center"| Etch rates in zep resist (nm/min)
! colspan="4" align="center"| Etch rates in zep resist (nm/min)
|-
|-
! One point on wafer
! One point on wafer
|
|
|
|
|
|-
|-
! Images
! Images
![[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano10|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano10|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano10|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano10|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano10|Images]]
|-
|-
|}
|}

Revision as of 09:56, 28 March 2011

Recipe nano1.0 nano1.1 nano1.2 nano1.3
Tool Pegasus Pegasus Pegasus Pegasus
C4F8 (sccm) 52 52 52 52
SF6 (sccm) 38 38 38 38
O2 (sccm) 0 0 0 0
Coil power (W) 800 (forward) 600 (forward) 800 (forward) 600 (forward)
Platen power (W) 50 50 50 40
Pressure (mtorr) 4 4 4 4
Process time (s) 120 120 120 120
Nominal line width Etched depths (nm)
30 nm
60 nm
90 nm
120 nm
150 nm
Nominal line width Etch rates in trenches (nm/min)
30 nm
60 nm
90 nm
120 nm
150 nm
Etch rates in zep resist (nm/min)
One point on wafer
Images Images Images Images Images

The nanoetch

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