Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch

Recipe	nano1.0
Tool	Pegasus
C4F8 (sccm)	52
SF6 (sccm)	38
O2 (sccm)	0
Coil power (W)	800 (forward)
Platen power (W)	50
Pressure (mtorr)	4
Process time (s)	120
Nominal line width	Etched depths (nm)
30 nm
60 nm
90 nm
120 nm
150 nm
Nominal line width	Etch rates in trenches (nm/min)
30 nm
60 nm
90 nm
120 nm
150 nm
	Etch rates in zep resist (nm/min)
One point on wafer
Images	Images

• ICP Metal Etch nanoetch

The nanoetch