Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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== Substrate preparation == | == Substrate preparation == | ||
Substrates must be prepared for EBL by applying an e-beam sensitive resist and possibly a discharge layer. Please consult the [[Specific Process Knowledge/Lithography/EBeamLithography/EBLsubstratePrep| EBL substrate preparation guide]] on how to prepare your substrate. | Substrates must be prepared for EBL by applying an e-beam sensitive resist and possibly a discharge layer. Please consult the [[Specific Process Knowledge/Lithography/EBeamLithography/EBLsubstratePrep| EBL substrate preparation guide]] on how to prepare your substrate. | ||
Please observe that for wafer exposure on JEOL 9500, the wafer is clamped such that it is not possible to expose the rim of the wafer. The patternable diameter for wafers are: | |||
*2": 44 mm | |||
*4": 93 mm | |||
*6": 138 mm | |||
== Pattern preparation == | == Pattern preparation == | ||