Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

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 |style="background:LightGrey; color:black"|Process Temperature
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-*Normally 350-500 <sup>o</sup>C for wafers and samples
+*Normally 350-500 <sup>o</sup>C for wafers and samples with aluminium
 *Up to 1150 <sup>o</sup>C for wafers and samples with other materials
 |-
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 |style="background:LightGrey; color:black"|Gas flows
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-*N<sub>2</sub>: 0-10 slm
+*N<sub>2</sub> (nitrogen): 0-10 slm
-*O<sub>2</sub>: 0-10 slm
+*O<sub>2</sub> (oxygen): 0-10 slm
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
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 | style="background:LightGrey; color:black"|Substrate materials allowed
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-*Silicon wafers with aluminium.
+*Silicon and quartz samples with
+**SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>
+**Aluminium
+**Al<sub>2</sub>O<sub>3</sub> deposited by ALD
+*Other materials might be allowed in the furnace, but
+wafers with aluminium.
 *Silicon wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD
 *Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone
 |-
 |}