Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

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-Annealing and oxidation of e.g.
+*Annealing in N<sub>2</sub>
-*
+*Dry oxidation with O<sub>2</sub>
-Wafers with aluminium
-*Wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD
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 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
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-*Normally 350-500 <sup>o</sup>C for wafers with aluminium, but the maximum furnace temperature is 1150 <sup>o</sup>C
+*Normally 350-500 <sup>o</sup>C for wafers and samples
+*Up to 1150 <sup>o</sup>C for wafers and samples with other materials
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 |style="background:LightGrey; color:black"|Process pressure
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-*1 atm
+*1 atm (no vacuum)
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 |style="background:LightGrey; color:black"|Gas flows