Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3: Difference between revisions
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The ScN sample used for XPS analysis was deposited at the PC Gun Z-shift Extended position (95.20mm) under the following conditions: 400°C, Ar/N 40/18 sccm, 200W power, 3mTorr pressure, and a deposition time of 1000 seconds. | The ScN sample used for XPS analysis was deposited at the PC Gun Z-shift Extended position (95.20mm) under the following conditions: 400°C, Ar/N 40/18 sccm, 200W power, 3mTorr pressure, and a deposition time of 1000 seconds. | ||
Estimated stoichiometry is following: N=37.73%, Sc=48.11%, O=13.89%. | |||
The Sc target used in the experiment was new, and due to its susceptibility to oxidation, there is a possibility of a pronounced level of Scandium oxynitride formation. We believe that more extensive usage of the target will remove the oxidized top layer. Additionally, it is necessary to perform preconditioning (pre-sputtering) of the target before using it in applications. This pre-sputtering process will help minimize the oxygen level in the resulting film. | |||
<gallery caption="X-ray reflectivity scans of Sc thin films (PC3 Src1). " widths="450px" heights="400px" perrow="3"> | <gallery caption="X-ray reflectivity scans of Sc thin films (PC3 Src1). " widths="450px" heights="400px" perrow="3"> | ||