Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

Revision as of 10:43, 22 March 2011

Recipe	nano1
Tool	Pegasus
C₄F₈ (sccm)	52
SF₆ (sccm)	38
O₂ (sccm)	0
Coil power (W)	800 (forward)
Platen power (W)	50
Pressure (mtorr)	4
Process time (s)	120
Nominal line width	Etched depths (nm)
30 nm
60 nm
90 nm
120 nm
150 nm
Nominal line width	Etch rates in trenches (nm/min)
30 nm
60 nm
90 nm
120 nm
150 nm
	Etch rates in zep resist (nm/min)
zep

@@ Line 1: / Line 1: @@
 {| border="2" cellspacing="1" cellpadding="3" align="center"
 !Recipe
@@ Line 14: / Line 13: @@
 |-
 !O<sub>2</sub> (sccm)
-|15
+|0
 |-
 ! Coil power (W)
@@ Line 27: / Line 26: @@
 |-
 ! Process time (s)
-|150
+|120
 |-
 ! Nominal line width
@@ Line 33: / Line 32: @@
 |-
 ! 30 nm
-|198
+|
 |-
 !60 nm
-|256
+|
 |-
 !90 nm
-|259
+|
 |-
 !120 nm
-|277
+|
 |-
 !150 nm
-|269
+|
 |-
 ! Nominal line width
@@ Line 51: / Line 50: @@
 |-
 !30 nm
-|79
+|
 |-
 !60 nm
-|102
+|
 |-
 !90 nm
-|104
+|
 |-
 !120 nm
-|111
+|
 |-
 !150 nm
-|108
+|
 |-
 |
@@ Line 69: / Line 68: @@
 |-
 ! zep
-|18
+|
 |-
 |}