Specific Process Knowledge/Etch/DRIE-Pegasus/FAQ/Nanoetch: Difference between revisions

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 ; Answer
 :Congratulations of your new addition!  I can suggest a starting point for this but it would probably be best to wait until you can send me the additional details.
+Three different examples of etch are shown here. The masking material was zep520A (80 nm).
+{| border="1" cellspacing="1" cellpadding="2"  align="left"
+! Vertical sidewalls
+! Low ARDE
+! Positive tappered side walls
+|-
+| [[Image:WF_2A_n5_jan02_06_1x_100_75.jpg|250x250px]]
+|[[Image:WF_2C_n5_nov3_06_1x_100_75.jpg|250x250px]]
+|[[Image:WF_2D_n6_sep19_05_1x_100_75.jpg|250x250px]]
+|-
+|[[Image:WF_2A_n5_jan02_06_3x_overview.jpg|250x250px]]
+|[[Image:WF_2C_n5_nov3_06_overview.jpg|250x250px]]
+|[[Image:WF_2D_n6_sep19_05_1x_overview.jpg|250x250px]]
+|-
+|
+Etch cycle
+*SF6 flow [sccm]:50
+*C4F8 flow [sccm]:100
+*Pressure [mTorr] 20
+*Coil power [W]: 350
+*Platen power [W]: 30
+*Cycle Time [s]: 5
+Dep. Cycle
+*C4F8 flow [sccm]: 100
+*Pressure [mTorr]: 20
+*Coil power [W]: 500
+*Platen power [W]: 0
+*Cycle Time [s]: 3
+*Temperature [Deg. C] 20
+Results:
+*Etch rate of 100nm lines: 146nm/min @etch time: 1:36min.
+|
+Etch cycle
+*SF6 flow [sccm]:50
+*C4F8 flow [sccm]:100
+*Pressure [mTorr] 10
+*Coil power [W]: 350
+*Platen power [W]: 30
+*Cycle Time [s]: 5
+Dep. Cycle
+*C4F8 flow [sccm]: 100
+*Pressure [mTorr]: 10
+*Coil power [W]: 500
+*Platen power [W]: 0
+*Cycle Time [s]: 3
+*Temperature [Deg. C] -10
+Results:
+*Etch rate of 100nm lines: 131nm/min @etch time: 1:36min.
+|
+Etch cycle
+*SF6 flow [sccm]:50
+*C4F8 flow [sccm]:100
+*Pressure [mTorr] 10
+*Coil power [W]: 350
+*Platen power [W]: 10
+*Cycle Time [s]: 5
+Dep. Cycle
+*C4F8 flow [sccm]: 100
+*Pressure [mTorr]: 10
+*Coil power [W]: 500
+*Platen power [W]: 0
+*Cycle Time [s]: 3
+*Temperature [Deg. C] 20
+Results:
+*Etch rate of 100nm lines: 209nm/min @etch time: 2:56min.
+|-
+|
+|
+|
+|-
+|}
 ; Question