Specific Process Knowledge/Thermal Process/RTP Jipelec 2: Difference between revisions
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* '''Max. 100 <sup>o</sup>C/s''' with '''carrier wafer''' or '''sample wafer''' | * '''Max. 100 <sup>o</sup>C/s''' with '''carrier wafer''' or '''sample wafer''' | ||
* '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor''' | * '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor''' | ||
|style="background:WhiteSmoke; color:black;" align="left"| | |style="background:WhiteSmoke; color:black;" align="left"| At faster heating rates, the actual temperature might overshoot from the temperature setpoint in the recipe, and the susceptors/carriers might break. | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||