Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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</gallery> | </gallery> | ||
===Profile, top view at tilted SEM images=== | ===Profile, top view at tilted SEM images on 800 nm pitch and 50% duty cycle ( look at the Cr mask in top of the page=== | ||
<gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="2" widths="400px" heights="300px"> | <gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="2" widths="400px" heights="300px"> | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="2" widths="400px" heights="300px"> | ||
File:C10022_03__02.jpg | File:C10022_03__02.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow="2" widths="400px" heights="300px"> | ||
File:C10025_03__07.jpg | File:C10025_03__07.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow="2" widths="400px" heights="300px"> | ||
File:C10026_03__01.jpg | File:C10026_03__01.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W" perrow="2" widths="400px" heights="300px"> | ||
File:C10084_11.jpg | File:C10084_11.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="2" widths="400px" heights="300px"> | ||
File:C10093_03__07.jpg | File:C10093_03__07.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="2" widths="400px" heights="300px"> | ||
File:C10101_03__07.jpg | File:C10101_03__07.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="2" widths="400px" heights="300px"> | ||
File:C10102_03__01.jpg | File:C10102_03__01.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="2" widths="400px" heights="300px"> | ||
File:C10110_08.jpg |pitch 800 nm <br> Top 461 nm <br> @edge 437 nm <br> bottom 402 nm <br> height 916 nm <br> height from edge 827 nm <br> Cr left 83.5 nm <br> selectivity 55.5 | File:C10110_08.jpg |pitch 800 nm <br> Top 461 nm <br> @edge 437 nm <br> bottom 402 nm <br> height 916 nm <br> height from edge 827 nm <br> Cr left 83.5 nm <br> selectivity 55.5 | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="2" widths="400px" heights="300px"> | ||
File:C10119_05.jpg |pitch 800 nm <br> Top 444 nm <br> bottom 374 nm <br> height 718 nm <br> Cr left 85 nm <br> selectivity 48 | File:C10119_05.jpg |pitch 800 nm <br> Top 444 nm <br> bottom 374 nm <br> height 718 nm <br> Cr left 85 nm <br> selectivity 48 | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="2" widths="400px" heights="300px"> | ||
File:C10160_09.jpg | File:C10160_09.jpg |
Revision as of 13:57, 3 November 2023
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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
SiO2 trench etching with Cr mask
Start parameters, variations noted in the gallery headline | Recipe name: no 10 with lower platen power |
---|---|
Coil Power [W] | 2500 |
Platen Power [W] | 200 |
Platen temperature [oC] | 20 |
H2 flow [sccm] | 25.6 |
C4F8 flow [sccm] | 25.6 |
He flow [sccm] | 448.7 |
Pressure | Fully open APC valve (8-9 mTorr) |
Electromagnetic coils (EM) 'outer coil' / 'inner coil' | '2 A' / '30 A' (PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN) |
- 100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc.
Results
Temporary conclusions on how the process parameters affect the results in this study: | What process parameters affect the results? |
|
|
Profile SEM images
-
pitch 800 nm
Top 461 nm
@edge 437 nm
bottom 402 nm
height 916 nm
height from edge 827 nm
Cr left 83.5 nm
selectivity 55.5 -
156 nm/min
-
pitch 800 nm
Top 444 nm
bottom 374 nm
height 718 nm
Cr left 85 nm
selectivity 48
-
Etch on none patterned wafer, Uniformity: +- 6.4%
-
Etch on none patterned wafer, Uniformity: +-1.7%
Profile, top view at tilted SEM images on 800 nm pitch and 50% duty cycle ( look at the Cr mask in top of the page
-
pitch 800 nm
Top 461 nm
@edge 437 nm
bottom 402 nm
height 916 nm
height from edge 827 nm
Cr left 83.5 nm
selectivity 55.5
-
pitch 800 nm
Top 444 nm
bottom 374 nm
height 718 nm
Cr left 85 nm
selectivity 48
-
tilt 30 degrees
-
tilt 30 degrees
-
tilt 20 degrees
-
tilt 20 degrees