Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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</gallery> | </gallery> | ||
===Profile, top view at tilted SEM images=== | ===Profile, top view at tilted SEM images on 800 nm pitch and 50% duty cycle ( look at the Cr mask in top of the page=== | ||
<gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="2" widths="400px" heights="300px"> | <gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="2" widths="400px" heights="300px"> | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="2" widths="400px" heights="300px"> | ||
File:C10022_03__02.jpg | File:C10022_03__02.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow="2" widths="400px" heights="300px"> | ||
File:C10025_03__07.jpg | File:C10025_03__07.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow="2" widths="400px" heights="300px"> | ||
File:C10026_03__01.jpg | File:C10026_03__01.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W" perrow="2" widths="400px" heights="300px"> | ||
File:C10084_11.jpg | File:C10084_11.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="2" widths="400px" heights="300px"> | ||
File:C10093_03__07.jpg | File:C10093_03__07.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="2" widths="400px" heights="300px"> | ||
File:C10101_03__07.jpg | File:C10101_03__07.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="2" widths="400px" heights="300px"> | ||
File:C10102_03__01.jpg | File:C10102_03__01.jpg | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="2" widths="400px" heights="300px"> | ||
File:C10110_08.jpg |pitch 800 nm <br> Top 461 nm <br> @edge 437 nm <br> bottom 402 nm <br> height 916 nm <br> height from edge 827 nm <br> Cr left 83.5 nm <br> selectivity 55.5 | File:C10110_08.jpg |pitch 800 nm <br> Top 461 nm <br> @edge 437 nm <br> bottom 402 nm <br> height 916 nm <br> height from edge 827 nm <br> Cr left 83.5 nm <br> selectivity 55.5 | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="2" widths="400px" heights="300px"> | ||
File:C10119_05.jpg |pitch 800 nm <br> Top 444 nm <br> bottom 374 nm <br> height 718 nm <br> Cr left 85 nm <br> selectivity 48 | File:C10119_05.jpg |pitch 800 nm <br> Top 444 nm <br> bottom 374 nm <br> height 718 nm <br> Cr left 85 nm <br> selectivity 48 | ||
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</gallery> | </gallery> | ||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow=" | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="2" widths="400px" heights="300px"> | ||
File:C10160_09.jpg | File:C10160_09.jpg | ||