Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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*100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc. | *100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc. | ||
[[File:C041696Cr_01.jpg|400px|thumb|left|Cr mask before SiO2 etch 800 nm pitch 50% duty cicle. The The Cr linewidth is clearly less than designed]] | [[File:C041696Cr_01.jpg|400px|thumb|left|Cr mask before SiO2 etch 800 nm pitch 50% duty cicle. The The Cr linewidth is clearly less than designed]] | ||
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==Results== | ==Results== | ||