Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px"> | ||
File:C10184_05.jpg | File:C10184_05.jpg | ||
File:C10184_07.jpg | File:C10184_07.jpg | ||
File:C10184_09.jpg | File:C10184_09.jpg | ||
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File: | File:C010184top_04.jpg | ||
File:C010184tilt30plasmaO2_02.jpg | |||
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File:C010184tilt30plasmaO2_01.jpg | |||
File:C010184tilt20plasmaO2_07.jpg | |||
File:C010184tilt20plasmaO2_05.jpg | |||
File:Contour Plot Y33 EM_0_0 blue to red.jpg| Etch on none patterned wafer, Uniformity: +-1.7% | File:Contour Plot Y33 EM_0_0 blue to red.jpg| Etch on none patterned wafer, Uniformity: +-1.7% | ||
</gallery> | </gallery> |
Revision as of 12:18, 3 November 2023
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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
SiO2 trench etching with Cr mask
Start parameters, variations noted in the gallery headline | Recipe name: no 10 with lower platen power |
---|---|
Coil Power [W] | 2500 |
Platen Power [W] | 200 |
Platen temperature [oC] | 20 |
H2 flow [sccm] | 25.6 |
C4F8 flow [sccm] | 25.6 |
He flow [sccm] | 448.7 |
Pressure | Fully open APC valve (8-9 mTorr) |
Electromagnetic coils (EM) 'outer coil' / 'inner coil' | '2 A' / '30 A' (PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN) |
- 100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc.
Results
Temporary conclusions on how the process parameters affect the results in this study: | What process parameters affect the results? |
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|
Profile SEM images
-
pitch 800 nm
Top 461 nm
@edge 437 nm
bottom 402 nm
height 916 nm
height from edge 827 nm
Cr left 83.5 nm
selectivity 55.5 -
156 nm/min
-
pitch 800 nm
Top 444 nm
bottom 374 nm
height 718 nm
Cr left 85 nm
selectivity 48
-
Etch on none patterned wafer, Uniformity: +- 6.4%
-
Etch on none patterned wafer, Uniformity: +-1.7%
Profile, top view at tilted SEM images
-
pitch 800 nm
Top 461 nm
@edge 437 nm
bottom 402 nm
height 916 nm
height from edge 827 nm
Cr left 83.5 nm
selectivity 55.5 -
156 nm/min
-
pitch 800 nm
Top 444 nm
bottom 374 nm
height 718 nm
Cr left 85 nm
selectivity 48
-
Etch on none patterned wafer, Uniformity: +- 6.4%
-
Etch on none patterned wafer, Uniformity: +-1.7%