Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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=SiO2 trench etching with Cr mask= | |||
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!Start parameters, variations noted in the gallery headline | !Start parameters, variations noted in the gallery headline | ||
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*100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc. | *100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc. | ||
==Results== | |||
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|'''Temporary conclusions on how the process parameters affect the results in this study:''' | |'''Temporary conclusions on how the process parameters affect the results in this study:''' | ||
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===Profile SEM images=== | |||
<gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | <gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | ||