Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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====Profile, top view at tilted SEM images==== | ====Profile, top view at tilted SEM images==== | ||
<gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px"> | |||
File:C09721_center_10.jpg | |||
File:C09721_center_18.jpg | |||
File:C09721_center_21.jpg | |||
File:C09721_center_07.jpg | |||
File:C09721_center_05.jpg | |||
File:C09721_center_22.jpg | |||
</gallery> | |||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="6" widths="200px" heights="150px"> | |||
File:C10022_03__06.jpg | |||
File:C10022_03__04.jpg | |||
File:C10022_03__02.jpg | |||
File:C10022_03__08.jpg | |||
File:C10022_03__10.jpg | |||
File:C10022_03__12.jpg | |||
</gallery> | |||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow="6" widths="200px" heights="150px"> | |||
File:C10025_03__11.jpg | |||
File:C10025_03__09.jpg | |||
File:C10025_03__07.jpg | |||
File:C10025_03__05.jpg | |||
File:C10025_03__03.jpg | |||
File:C10025_03__01.jpg | |||
</gallery> | |||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow="6" widths="200px" heights="150px"> | |||
File:C10026_03__05.jpg | |||
File:C10026_03__03.jpg | |||
File:C10026_03__01.jpg | |||
File:C10026_03__07.jpg | |||
File:C10026_03__09.jpg | |||
File:C10026_03__10.jpg | |||
</gallery> | |||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr" perrow="6" widths="200px" heights="150px"> | |||
File:C10082_11.jpg | |||
File:C10082_09.jpg | |||
File:C10082_07.jpg | |||
File:C10082_05.jpg | |||
File:C10082_03.jpg | |||
File:C10082_01.jpg | |||
</gallery> | |||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px"> | |||
File:C10084_15.jpg | |||
File:C10084_13.jpg | |||
File:C10084_11.jpg | |||
File:C10084_09.jpg | |||
File:C10084_06.jpg | |||
File:C10084_03.jpg | |||
</gallery> | |||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px"> | |||
File:C10093_03__11.jpg | |||
File:C10093_03__09.jpg | |||
File:C10093_03__07.jpg | |||
File:C10093_03__05.jpg | |||
File:C10093_03__03.jpg | |||
File:C10093_03__01.jpg | |||
</gallery> | |||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="7" widths="200px" heights="150px"> | |||
File:C10101_03__12.jpg | |||
File:C10101_03__10.jpg | |||
File:C10101_03__07.jpg | |||
File:C10101_03__05.jpg | |||
File:C10101_03__03.jpg | |||
File:C10101_03__01.jpg | |||
File:C10101_03__14.jpg | |||
</gallery> | |||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px"> | |||
File:C10102_03__05.jpg | |||
File:C10102_03__03.jpg | |||
File:C10102_03__01.jpg | |||
File:C10102_03__20.jpg | |||
File:C10102_03__18.jpg | |||
File:C10102_03__16.jpg | |||
</gallery> | |||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px"> | |||
File:C10110_04.jpg | |||
File:C10110_06.jpg | |||
File:C10110_08.jpg |pitch 800 nm <br> Top 461 nm <br> @edge 437 nm <br> bottom 402 nm <br> height 916 nm <br> height from edge 827 nm <br> Cr left 83.5 nm <br> selectivity 55.5 | |||
File:C10110_10.jpg |156 nm/min | |||
File:C10110_12.jpg | |||
</gallery> | |||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px"> | |||
File:C10119_01.jpg | |||
File:C10119_03.jpg | |||
File:C10119_05.jpg |pitch 800 nm <br> Top 444 nm <br> bottom 374 nm <br> height 718 nm <br> Cr left 85 nm <br> selectivity 48 | |||
File:C10119_06.jpg | |||
File:C10119_09.jpg | |||
File:C10119_11.jpg | |||
</gallery> | |||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px"> | |||
File:C10160_02.jpg | |||
File:C10160_06.jpg | |||
File:C10160_09.jpg | |||
File:C10160_12.jpg | |||
File:C10160_15.jpg | |||
File:C10160_17.jpg | |||
File:Contour Plot Y32 EM_02_30 blue to red.jpg| Etch on none patterned wafer, Uniformity: +- 6.4% | |||
</gallery> | |||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 10 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px"> | |||
File:C10161_01.jpg | |||
File:C10161_03.jpg | |||
File:C10161_05.jpg | |||
File:C10161_07.jpg | |||
File:C10161_09.jpg | |||
File:C10161_11.jpg | |||
</gallery> | |||
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px"> | |||
File:C10184_01.jpg | |||
File:C10184_05.jpg | |||
File:C10184_07.jpg | |||
File:C10184_09.jpg | |||
File:C10184_11.jpg | |||
File:C10184_12.jpg | |||
File:Contour Plot Y33 EM_0_0 blue to red.jpg| Etch on none patterned wafer, Uniformity: +-1.7% | |||
</gallery> |
Revision as of 10:13, 3 November 2023
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Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
Start parameters, variations noted in the gallery headline | Recipe name: no 10 with lower platen power |
---|---|
Coil Power [W] | 2500 |
Platen Power [W] | 200 |
Platen temperature [oC] | 20 |
H2 flow [sccm] | 25.6 |
C4F8 flow [sccm] | 25.6 |
He flow [sccm] | 448.7 |
Pressure | Fully open APC valve (8-9 mTorr) |
Electromagnetic coils (EM) 'outer coil' / 'inner coil' | '2 A' / '30 A' (PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN) |
- 100 nm Cr mask etched in ICP metal with 500nm DUV neg resist (NUV 2300-0.5) and 65 nm barc.
Results
Temporary conclusions on how the process parameters affect the results in this study: | What process parameters affect the results? |
|
|
Profile SEM images
-
pitch 800 nm
Top 461 nm
@edge 437 nm
bottom 402 nm
height 916 nm
height from edge 827 nm
Cr left 83.5 nm
selectivity 55.5 -
156 nm/min
-
pitch 800 nm
Top 444 nm
bottom 374 nm
height 718 nm
Cr left 85 nm
selectivity 48
-
Etch on none patterned wafer, Uniformity: +- 6.4%
-
Etch on none patterned wafer, Uniformity: +-1.7%
Profile, top view at tilted SEM images
-
pitch 800 nm
Top 461 nm
@edge 437 nm
bottom 402 nm
height 916 nm
height from edge 827 nm
Cr left 83.5 nm
selectivity 55.5 -
156 nm/min
-
pitch 800 nm
Top 444 nm
bottom 374 nm
height 718 nm
Cr left 85 nm
selectivity 48
-
Etch on none patterned wafer, Uniformity: +- 6.4%
-
Etch on none patterned wafer, Uniformity: +-1.7%